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"Adhesion of vacuum evaporated Sn on Ti evaporated adhesion layer"
February 10, 2016
Q. I am trying to deposit 50 nm thick Sn layer on Silicon wafer using Vacuum evaporation (1A/sec of deposition rate) using 50 nm thick Ti layer underneath as an adhesion layer. Ti layer adheres well to Silicon, but Sn layer can be wiped off by finger easily. Vacuum pressure before Sn deposition is 1E-7 but it will degrade to 1E-6 level. I tried heating Silicon wafer up to 120 °C before Ti deposition as well as during Sn deposition. This didn't help adhesion of Sn. Sn layer doesn't de-laminate, just be wiped out by finger.
Any brilliant suggestion?
Tatsuo Nakato ^
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