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Problematic TiW seed layer adhesion on Silicon

May 11, 2011

We use a TiW/Cu seed layer as base for our patterned electroplating.
What we observe is a bad adhesion of the TiW to the Silicon. The stress in the TiW was optimised before and is low. Are there any ideas/knowledge how to improve this?

Jochen Bauer
engineer - Dusseldorf, Germany

Is it an alloy of Ti and W or is it a two layer coating?How are you depositing TiW on silicon? What is the coating thickness? Deposition of Ti on Si by PVD should not be a problem. But substrate conditions and deposition parameters are also important.

H.R. Prabhakara - Consultant
Bangalore Plasmatek - Bangalore Karnataka India
May 16, 2011

November 11, 2011

Hello,

we use a TiW(10%Ti)/Cu-Seed layer as our plating seed layer.
The seed layer is deposited by sputtering and the stress values for the TiW are already quite small. The thickness of the TiW is 100 nm.

Jochen Bauer
- D��sseldorf, Germany

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